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參數(shù)資料
| 型號： | STP55NF06L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET |
| 中文描述： | N溝道60V的- 0.014ohm - 55A條TO-220/FP/D2PAK/I2PAK STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 454K |
| 代理商： | STP55NF06L |
1/12
August 2002
STP55NF06L - STP55NF06LFP
STB55NF06L - STB55NF06L-1
N-CHANNEL 60V - 0.014
- 55A TO-220/FP/D
2
PAK/I
2
PAK
STripFETII POWER MOSFET
(1) Starting T
j
=25
°C, I
D
=27.5A, V
DD
=30V
(2) I
SD
≤
55 A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
I
TYPICAL R
DS
(on) = 0.014
I
EXCEPTIONAL dv/dt CAPABILITY
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
Size
”
strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
“Single
Feature
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
(
TYPE
V
DSS
R
DS(on)
I
D
STP55NF06L
STP55NF06LFP
STB55NF06L
STB55NF06L-1
60 V
60 V
60 V
60 V
<0.018
<0.018
<0.018
<0.018
55 A
55 A
55 A
55 A
Parameter
Value
Unit
STP55NF06L
STB55NF06L/-1
STP55NF06LFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
60
V
60
V
Gate- source Voltage
± 16
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
55
30
A
39
21
A
Drain Current (pulsed)
220
120
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
95
30
W
0.63
0.2
W/°C
V/ns
dv/dt (2)
E
AS
(1)
V
ISO
T
stg
T
j
20
Single Pulse Avalanche Energy
300
mJ
Insulation Withstand Voltage (DC)
-
2500
V
Storage Temperature
– 55 to 175
°C
Max. Operating Junction Temperature
TO-220
1
2
3
1
2
3
TO-220FP
1
3
123
I
2
PAK
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB55NF06L | N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET |
| STP55NF06LFP | N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET |
| STB5600 | GPS RF FRONT-END IC |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP55NF06L | 制造商:STMicroelectronics 功能描述:MOSFET N CH 60V 55A TO-220 制造商:STMicroelectronics 功能描述:MOSFET, N CH, 60V, 55A, TO-220 |
| STP55NF06L | 制造商:STMicroelectronics 功能描述:MOSFET |
| STP55NF06L | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| STP55NF06L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.014ヘ - 55A TO-220/D2PAK/I2PAK STripFET⑩ II Power MOSFET |
| STP55NF06LFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET |
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