參數(shù)資料
型號(hào)： STB50NE10T4
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 50A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 50A條（?。﹟對(duì)263AB
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 95K
代理商： STB50NE10T4
STB50NE08
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
” POWER MOSFET
I
TYPICAL R
DS(on)
= 0.020
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE AT 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
I
FOR THROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
This Power MOSFET is the latestdevelopment of
SGS-THOMSON unique ”Single Feature Size
”
strip-based
process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkable manufacturingreproducibility.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SOLENOID ANDRELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
March 1998
1
3
D
2
PAK
TO-263
(suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
80
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
80
V
V
GS
±
20
V
I
D
50
A
I
D
35
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
200
A
150
W
Derating Factor
1
W/
o
C
dv/dt (
1
)
Peak Diode Recovery voltage slope
6
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
175
(
1
) I
SD
≤
50 A,di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
<0.024
I
D
STB50NE08
80 V
50 A
1/8
相關(guān)PDF資料
PDF描述
STB50NE08 N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強(qiáng)模式功率MOSFET)
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