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參數(shù)資料
| 型號： | STB5NB60T4 |
| 廠商： | 意法半導體 |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 93K |
| 代理商： | STB5NB60T4 |
STB5NB60
N - CHANNEL 600V - 1.8
- 5A - I
2
PAK/D
2
PAK
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 1.8
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
January 2000
123
I
2
PAK
TO-262
(suffix ”-1”)
TYPE
V
DSS
R
DS(on)
< 2.0
I
D
STB5NB60
600 V
5 A
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
600
Unit
V
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
600
±
30
5
V
V
A
3.1
20
A
A
100
0.8
W
W/
o
C
dv/dt(
1
)
T
stg
T
j
(
) Pulse width limited by safe operating area
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
4.5
V/ns
o
C
o
C
-65 to 150
150
(
1
) I
SD
≤
5A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
1
3
D
2
PAK
TO-263
(Suffix ”T4”)
1/9
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB5NB80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET |
| STB5NB80T4 | 功能描述:MOSFET N-CH 800V 5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB5NC50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET |
| STB5NC50-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET |
| STB5NC50T4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 1.3 OHM - 5.5A - TO-220/TO-220FP/D2PAK/I2PAK POWERMESH II MOSFET |
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