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參數(shù)資料
| 型號： | STB5NB60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 600V-1.8Ω-5A- I2PAK PowerMESHTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道600V的1.8Ω- 5A型- I2PAK PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 85K |
| 代理商： | STB5NB60 |
STB5NB60
N - CHANNEL 600V - 1.8
- 5A - I
2
PAK
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 1.8
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
FOR SMD D
2
PAK VERSION CONTACT
SALESOFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
November 1998
123
I
2
PAK
TO-262
(suffix ”-1”)
TYPE
V
DSS
R
DS(on)
< 2.0
I
D
STB5NB60
600 V
5 A
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
600
Unit
V
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
600
±
30
5
V
V
A
3.1
20
A
A
100
0.8
W
W/
o
C
dv/dt(
1
)
T
stg
T
j
(
) Pulse width limited by safe operating area
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
4.5
V/ns
o
C
o
C
-65 to 150
150
(
1
) I
SD
≤
5A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
1/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB5NB60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5A I(D) | TO-251AA |
| STB5NB60T4 | 功能描述:MOSFET N-Ch 600 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB5NB80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET |
| STB5NB80T4 | 功能描述:MOSFET N-CH 800V 5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB5NC50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh⑩II MOSFET |
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