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參數(shù)資料
| 型號： | STB50NE10 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 100V-0.021Ω-50A-D2PAK STripFETTM Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道100V的，0.021Ω- 50A條，采用D2PAK STripFETTM功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 85K |
| 代理商： | STB50NE10 |
STB50NE10
N - CHANNEL 100V - 0.021
- 50A - D
2
PAK
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.021
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
LOW GATE CHARGE AT 100
o
C
I
APPLICATIONORIENTED
CHARACTERIZATION
I
FOR THROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
”
strip-based
process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
”Single
Feature
rugged
avalanche
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
December 1998
1
3
D
2
PAK
TO-263
(suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
100
V
V
DGR
100
±
20
50
V
V
GS
I
D
I
D
I
DM
(
)
P
tot
V
A
35
A
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
200
A
150
W
1
W/
o
C
dv/dt (
1
)
Peak Diode Recovery voltage slope
6
V/ns
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
o
C
(
1
) I
SD
≤
50 A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
<0.027
I
D
STB50NE10
100 V
50 A
1/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB50NE10_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.021ヘ - 50A - D2PAK STripFET⑩ Power MOSFET |
| STB50NE10L | 功能描述:MOSFET RO 511-STB40NF10L RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB50NE10LT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 50A I(D) | TO-263AB |
| STB50NE10T4 | 功能描述:MOSFET N-Ch 100 Volt 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB50NF25 | 功能描述:MOSFET Hi Vltg Pwr SCHOTTKY RECTIF RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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