參數(shù)資料
型號(hào)： STB50NE10L
廠商： 意法半導(dǎo)體
英文描述： N-Channel 100V-0.020Ω-50A-D2PAK STripFETTM Power MOSFET(N溝道功率MOSFET)
中文描述： N溝道100V的，0.020Ω- 50A條，采用D2PAK STripFETTM功率MOSFET（不適用溝道功率MOSFET的）
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 50K
代理商： STB50NE10L
STB50NE10L
N - CHANNEL 100V - 0.020
- 50A - D
2
PAK
STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.020
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE AT 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
I
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
Size
" strip-based process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
"Single
Feature
rugged
avalanche
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
June 1998
1
3
D
2
PAK
TO-263
(suffix "T4")
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
100
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
100
V
V
GS
±
20
V
I
D
50
A
I
D
35
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
200
A
150
W
Derating Factor
1
W/
o
C
dv/dt (
1
)
Peak Diode Recovery voltage slope
6
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 175
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤
50 A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
175
TYPE
V
DSS
R
DS(on)
<0.025
I
D
STB50NE10L
100 V
50 A
1/5
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB50NE10LT4 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 50A I(D) | TO-263AB
STB50NE10T4 功能描述:MOSFET N-Ch 100 Volt 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB50NF25 功能描述:MOSFET Hi Vltg Pwr SCHOTTKY RECTIF RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB50NH02L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 24V - 0.011ohm - 50A DPAK STripFET⑩ III POWER MOSFET
STB50NH02LT4 功能描述:MOSFET N-Ch 24 Volt 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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