參數(shù)資料
型號(hào)： STB12NM60N
廠商： 意法半導(dǎo)體
英文描述： N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
中文描述： N溝道600V的- 0.35ヘ- 10A條- D2/I2PAK - TO-220/FP -到247⑩第二代MDmesh功率MOSFET
文件頁數(shù)： 4/18頁
文件大?。?/td> 581K
代理商： STB12NM60N
Electrical characteristics
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
4/18
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1mA, V
GS
= 0
600
V
dv/dt
(1)
1.
Characteristics value at turn off on inductive load
Drain-source voltage slope
V
DD
= 400V,I
D
= 10A,
V
GS
= 10V
41
V/ns
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,@125°C
1
10
μA
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250μA
2
3
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 5A
0.35
0.41
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs(1)
1.
Pulsed: pulse duration = 300μs, duty cycle 1.5%
Forward transconductance
V
DS
=15V, I
D
= 5A
8
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 50V, f =1MHz,
V
GS
= 0
960
65
7
pF
pF
pF
C
oss eq.(2)
2.
C
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
= 0, V
DS
= 0V to 480V
180
pF
Rg
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
5
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 480V, I
D
= 10A
V
GS
= 10V
(see Figure 18)
30.5
5
16
nC
nC
nC
相關(guān)PDF資料
PDF描述
STB12NM60N-1 N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
STP12NM60N N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
STB14NK50Z N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STB14NK50Z-1 Brilliance Bundled Coaxial Cable, Banana Peel; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
STP14NK50ZFP N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB12NM60N-1 功能描述:MOSFET N Ch 1500V 2.5A Hi Vltg Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB13005 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor
STB13005_07 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor
STB13005-1 功能描述:兩極晶體管 - BJT H/V FST SWCH PW TRNS NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
STB13007DT4 功能描述:兩極晶體管 - BJT NPN power transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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