參數(shù)資料
型號(hào)： STB12NM60N
廠商： 意法半導(dǎo)體
英文描述： N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
中文描述： N溝道600V的- 0.35ヘ- 10A條- D2/I2PAK - TO-220/FP -到247⑩第二代MDmesh功率MOSFET
文件頁數(shù)： 3/18頁
文件大小： 581K
代理商： STB12NM60N
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Electrical ratings
3/18
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D2PAK/I2PAK
TO-220/TO-247
TO-220FP
V
DS
Drain-source voltage (V
GS
=0)
600
V
V
GS
Gate-source voltage
± 25
V
I
D
Drain current (continuous) at T
C
= 25°C
10
10
(1)
1.
Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
= 100°C
6.3
6.3
(1)
A
I
DM (2)
2.
Pulse width limited by safe operating area
I
SD
≤
10A, di/dt
≤
400A/μs, V
DD
=80%
V
(BR)DSS
Drain current (pulsed)
40
40
(1)
A
P
TOT
Total dissipation at T
C
= 25°C
90
25
W
dv/dt
(3)
3.
Peak diode recovery voltage slope
15
V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T
C
=25°C)
--
2500
V
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
D2PAK/I2PAK
TO-220/TO-247
TO-220FP
Unit
Rthj-case
Thermal resistance junction-case max
1.38
5
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
°C/W
T
l
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
I
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
3.5
A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, I
D
=I
AS
, V
DD
= 50V)
200
mJ
相關(guān)PDF資料
PDF描述
STB12NM60N-1 N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
STP12NM60N N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
STB14NK50Z N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STB14NK50Z-1 Brilliance Bundled Coaxial Cable, Banana Peel; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
STP14NK50ZFP N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB12NM60N-1 功能描述:MOSFET N Ch 1500V 2.5A Hi Vltg Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB13005 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor
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STB13005-1 功能描述:兩極晶體管 - BJT H/V FST SWCH PW TRNS NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
STB13007DT4 功能描述:兩極晶體管 - BJT NPN power transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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