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參數(shù)資料
| 型號： | STB12NM60N |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET |
| 中文描述： | N溝道600V的- 0.35ヘ- 10A條- D2/I2PAK - TO-220/FP -到247⑩第二代MDmesh功率MOSFET |
| 文件頁數(shù)： | 1/18頁 |
| 文件大?。?/td> | 581K |
| 代理商： | STB12NM60N |
April 2007
Rev 2
1/18
18
STB12NM60N/-1 - STF12NM60N
STP12NM60N - STW12NM60N
N-channel 600V - 0.35
- 10A - D
2
/I
2
PAK - TO-220/FP - TO-247
Second generation MDmesh Power MOSFET
Features
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
Description
This series of devices implements second
generation MDmesh technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Application
■
Switching application
Internal schematic diagram
Type
V
DSS
(@Tjmax)
R
DS(on)
I
D
STB12NM60N
650V
< 0.41
< 0.41
< 0.41
< 0.41
< 0.41
10A
STB12NM60N-1
650V
10A
10A
(1)
STF12NM60N
650V
1.
Limited only by maximum temperature allowed
STP12NM60N
650V
10A
STW12NM60N
650V
10A
TO-220
TO-220FP
I2PAK
1
2
3
1
2
3
123
TO-247
D2PAK
1
3
www.st.com
Order codes
Part number
Marking
Package
Packaging
STB12NM60N
B12NM60N
D2PAK
Tape & reel
STB12NM60N-1
B12NM60N
I2PAK
Tube
STF12NM60N
F12NM60N
TO-220FP
Tube
STP12NM60N
P12NM60N
TO-220
Tube
STW12NM60N
W12NM60N
TO-247
Tube
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB12NM60N-1 | N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET |
| STP12NM60N | N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET |
| STB14NK50Z | N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STB14NK50Z-1 | Brilliance Bundled Coaxial Cable, Banana Peel; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| STP14NK50ZFP | N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB12NM60N-1 | 功能描述:MOSFET N Ch 1500V 2.5A Hi Vltg Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB13005 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor |
| STB13005_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High voltage fast-switching NPN power transistor |
| STB13005-1 | 功能描述:兩極晶體管 - BJT H/V FST SWCH PW TRNS NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| STB13007DT4 | 功能描述:兩極晶體管 - BJT NPN power transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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