參數(shù)資料
型號(hào)： STB11NM60FD
廠商： 意法半導(dǎo)體
英文描述： N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET
中文描述： N溝道30V的- 0.014ohm - 45A條至220 -到220FP -采用D2PAK STripFET二功率MOSFET
文件頁(yè)數(shù)： 4/16頁(yè)
文件大小： 339K
代理商： STB11NM60FD
Electrical characteristics
STP45NF3LL - STB45NF3LL
4/16
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Table 4.
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
= 250 μA, V
GS
= 0
30
V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating
1
μA
V
DS
=Max rating, T
C
=125°C
10
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±16V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250μA
1
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 22.5A
V
GS
= 4.5V, I
D
= 22.5A
0.014
0.016
0.018
0.020
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Forward transconductance
V
DS
= 15V
,
I
D
=22.5A
20
S
C
iss
Input capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
800
pF
C
oss
Output capacitance
250
pF
C
rss
Reverse transfer
capacitance
60
pF
Q
g
Total gate charge
V
DD
= 24V, I
D
= 45A,
V
GS
= 5V
12.5
17
nC
Q
gs
Gate-source charge
4.6
nC
Q
gd
Gate-drain charge
5.2
nC
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 15V, I
D
= 22.5A
R
G
= 4.7
V
GS
= 4.5V
(see Figure 15)
17
100
ns
ns
t
d(off)
t
f
Turn-off-delay time
Fall time
V
DD
= 15V, I
D
= 22.5A,
R
G
= 4.7
,
V
GS
= 4.5V
(see Figure 15)
20
21
ns
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB11NM60FD-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET
STB11NM60FDT4 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB11NM60N 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh⑩ Power MOSFET
STB11NM60N-1 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB11NM60T4 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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