參數(shù)資料
型號： STB11NM60FD
廠商： 意法半導(dǎo)體
英文描述： N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET
中文描述： N溝道30V的- 0.014ohm - 45A條至220 -到220FP -采用D2PAK STripFET二功率MOSFET
文件頁數(shù)： 1/16頁
文件大小： 339K
代理商： STB11NM60FD
August 2006
Rev 4
1/16
16
STP45NF3LL - STP45NF3LLFP
STB45NF3LL
N-channel 30V - 0.014
- 45A TO-220 - TO-220FP - D
2
PAK
STripFET II power MOSFET
General features
■
Optimal R
DS(on)
x Q
g
trade-off @ 4.5V
■
Conduction losses reduced
■
Switching losses reduced
Description
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique
“Single Feature Size” strip-based process. The
resulting transistor shows the best trade-off
between on-resistance ang gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Applications
■
Switching application
Internal schematic diagram
Type
V
DSS
30V
30V
30V
R
DS(on)
<0.018
<0.018
<0.018
I
D
STB45NF3LL
STP45NF3LLFP
STP45NF3LL
45A
45A
27A
D2PAK
TO-220
TO-220FP
1
2
3
1
3
1
2
3
www.st.com
Order codes
Part number
Marking
Package
Packaging
STB11NM60FD
STB11NM60FD-1
STP11NM60FD
B11NM60FD
B11NM60FD
P11NM60FD
D2PAK
I2PAK
TO-220
Tape & reel
Tube
Tube
相關(guān)PDF資料
PDF描述
STB12NM60N N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
STB12NM60N-1 N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
STP12NM60N N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
STB14NK50Z N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STB14NK50Z-1 Brilliance Bundled Coaxial Cable, Banana Peel; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB11NM60FD-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET
STB11NM60FDT4 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB11NM60N 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh⑩ Power MOSFET
STB11NM60N-1 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB11NM60T4 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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