- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365695 > SST31LF041-300-4E-WH (Silicon Storage Technology, Inc.) 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory PDF資料下載
參數(shù)資料
| 型號(hào)： | SST31LF041-300-4E-WH |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | 組合存儲(chǔ)器 |
| 英文描述： | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| 中文描述： | 4 Mbit閃存1兆位或256千位的SRAM ComboMemory |
| 文件頁數(shù)： | 9/24頁 |
| 文件大?。?/td> | 294K |
| 代理商： | SST31LF041-300-4E-WH |
Data Sheet
2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021 / SST31LF021E
9
2001 Silicon Storage Technology, Inc.
S71137-03-000
10/01 392
AC CHARACTERISTICS
TABLE
9: SRAM M
EMORY
B
ANK
R
EAD
C
YCLE
T
IMING
P
ARAMETERS
(V
DD
= 3.0-3.6V)
Symbol
T
RCS
T
AAS
T
BES
T
OES
T
BLZS1
T
OLZS1
T
BHZS1
T
OHZS1
T
OHS
Parameter
Read Cycle Time
Address Access Time
Bank Enable Access Time
Output Enable Access Time
BES# to Active Output
Output Enable to Active Output
BES# to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
SST31LF021-70
Min
70
SST31LF021E-300
Min
300
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
70
70
35
300
300
150
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
0
0
15
15
25
25
30
30
0
10
T9.4 392
TABLE 10: SRAM M
EMORY
B
ANK
W
RITE
C
YCLE
T
IMING
P
ARAMETERS
(V
DD
= 3.0-3.6V)
Symbol
T
WCS
T
BWS
T
AWS
T
ASTS
T
WPS
T
WRS
T
DSS
T
DHS
Parameter
Write Cycle Time
Bank Enable to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write recovery Time
Data Set-up Time
Data Hold from Write Time
SST31LF021-70
Min
70
60
60
0
60
0
30
0
SST31LF021E-300
Min
300
230
230
0
200
0
150
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
T10.4 392
TABLE 11: F
LASH
R
EAD
C
YCLE
T
IMING
P
ARAMETERS
(V
DD
= 3.0-3.6V)
Symbol
T
RC
T
BE
T
AA
T
OE
T
BLZ1
T
OLZ1
T
BHZ1
T
OHZ1
T
OH1
Parameter
Read Cycle Time
Bank Enable Access Time
Address Access Time
Output Enable Access Time
BEF# Low to Active Output
OE# Low to Active Output
BEF# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
SST31LF021-70
Min
70
SST31LF021E-300
Min
300
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
70
70
40
300
300
150
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
0
0
0
0
15
15
60
60
0
0
T11.3 392
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST31LF041-300-4E-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WH | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4E-WH | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4E-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST31LF041-300-4E-WI | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WI | 功能描述:閃存 4M FLASH 1M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST31LF041-70-4C-WIE | 功能描述:閃存 4M FLASH 1M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST31LF041-70-4E-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。