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參數(shù)資料
| 型號： | SST31LF041-300-4E-WH |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | 組合存儲器 |
| 英文描述： | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| 中文描述： | 4 Mbit閃存1兆位或256千位的SRAM ComboMemory |
| 文件頁數(shù)： | 6/24頁 |
| 文件大?。?/td> | 294K |
| 代理商： | SST31LF041-300-4E-WH |
6
Data Sheet
2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021 / SST31LF021E
2001 Silicon Storage Technology, Inc.
S71137-03-000
10/01 392
TABLE
2: P
IN
D
ESCRIPTION
Symbol
A
MS1
-A
0
Pin Name
Address Inputs
Functions
To provide memory addresses.
During flash Sector-Erase, A
17
-A
12
address lines will select the sector.
A
17
-A
0
to provide flash address
A
16
-A
0
to provide SST31LF021/021E SRAM
addresses
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a flash Erase/Program cycle.
The outputs are in tri-state when OE# or BES# and BEF# are high.
To activate the SRAM memory bank when BES# is low.
To activate the Flash memory bank when BEF# is low.
To gate the data output buffers.
To control the Write operations.
3.0-3.6V Power Supply
DQ
7
-DQ
0
Data Input/Output
BES#
BEF#
OE#
WE#
V
DD
V
SS
SRAM Memory Bank Enable
Flash Memory Bank Enable
Output Enable
Write Enable
Power Supply
Ground
T2.3 392
1. A
MS
= Most significant address
TABLE
3: O
PERATION
M
ODES
S
ELECTION
Mode
Flash
BES#
BEF#
OE#
WE#
A
9
DQ
Address
Read
Program
Erase
X
1
X
X
1. X can be V
IL
or V
IH
, but no other value.
2. Device ID 18H for SST31LF021, 19H for SST31LF021E.
V
IL
V
IL
V
IL
V
IL
V
IH
V
IH
V
IH
V
IL
V
IL
A
IN
A
IN
X
D
OUT
D
IN
X
A
IN
A
IN
Sector address,
XXH for Bank-Erase
SRAM
Read
Write
V
IL
V
IL
V
IHC
X
X
X
V
IH
V
IH
V
IHC
X
X
V
IH
V
IL
X
X
V
IL
X
X
V
IH
V
IL
X
X
V
IH
X
A
IN
A
IN
X
X
X
X
D
OUT
D
IN
High Z
High Z / D
OUT
High Z / D
OUT
High Z / D
OUT
A
IN
A
IN
X
X
X
X
Standby
Flash Write Inhibit
Product Identification
Hardware Mode
X
V
IL
V
IL
V
IH
V
H
Manufacturer’s ID (BFH)
Device ID
2
ID Code
A
17
-A
1
=V
IL
, A
0
=V
IL
A
17
-A
1
=V
IL
, A
0
=V
IH
See Table 4
Software Mode
X
V
IL
V
IL
V
IH
A
IN
T3.4 392
相關PDF資料 |
PDF描述 |
|---|---|
| SST31LF041-300-4E-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WH | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4E-WH | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4E-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SST31LF041-300-4E-WI | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WI | 功能描述:閃存 4M FLASH 1M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST31LF041-70-4C-WIE | 功能描述:閃存 4M FLASH 1M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST31LF041-70-4E-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
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