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參數(shù)資料
| 型號： | SST31LF041-300-4E-WH |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | 組合存儲器 |
| 英文描述： | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| 中文描述： | 4 Mbit閃存1兆位或256千位的SRAM ComboMemory |
| 文件頁數(shù)： | 8/24頁 |
| 文件大?。?/td> | 294K |
| 代理商： | SST31LF041-300-4E-WH |
8
Data Sheet
2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021 / SST31LF021E
2001 Silicon Storage Technology, Inc.
S71137-03-000
10/01 392
TABLE
5: DC O
PERATING
C
HARACTERISTICS
(V
DD
= 3.0-3.6V)
Symbol
I
DD
Parameter
Power Supply Current
Limits
Max
Test Conditions
Address input V
IL
/V
IH
, at f=1/T
RC
Min,
V
DD
=V
DD
Max, all DQs open
OE#=V
IL
, WE#=V
IH
BEF#=V
IL
, BES#=V
IH
BEF#=V
IH
, BES#=V
IL
BEF#=V
IH
, BES#=V
IL
OE#=V
IH
, WE#=V
IL
BEF#=V
IL
, BES#=V
IH
BEF#=V
IH
, BES#=V
IL
BEF#=BES#=V
IHC
, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
I
OL
=100 μA, V
DD
=V
DD
Min
I
OH
=-100 μA, V
DD
=V
DD
Min
BEF#=OE#=V
IL
, WE#=V
IH
BEF#=OE#=V
IL
, WE#=V
IH,
A
9
=V
H
Max
Min
Units
Read
Flash
SRAM
12
40
55
mA
mA
mA
Concurrent Operation
Write
Flash (Program)
SRAM
Standby V
DD
Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
Supervoltage for A
9
pin
Supervoltage Current for A
9
pin
15
40
30
1
1
0.4
mA
mA
μA
μA
μA
V
V
V
V
V
V
μA
I
SB1
I
LI
I
LO
V
IL
V
IH
V
IHC
V
OL
V
OH
V
H
I
H
0.7V
DD
V
DD
-0.3
0.2
V
DD
-0.2
11.4
12.6
200
T5.3 392
1. Specification applies to commercial temperature devices only. This parameter may be higher for extended devices.
TABLE
6: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
100
100
Units
μs
μs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T6.1 392
TABLE
7: C
APACITANCE
(Ta = 25°C, f=1 Mhz, other pins open)
Parameter
C
I/O1
C
IN1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T7.0 392
TABLE
8: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
I
LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I
DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
T8.1 392
相關PDF資料 |
PDF描述 |
|---|---|
| SST31LF041-300-4E-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WH | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4E-WH | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4E-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SST31LF041-300-4E-WI | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WI | 功能描述:閃存 4M FLASH 1M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST31LF041-70-4C-WIE | 功能描述:閃存 4M FLASH 1M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST31LF041-70-4E-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
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