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參數(shù)資料
| 型號(hào)： | SST31LF041-300-4E-WH |
| 廠商： | Silicon Storage Technology, Inc. |
| 元件分類： | 組合存儲(chǔ)器 |
| 英文描述： | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| 中文描述： | 4 Mbit閃存1兆位或256千位的SRAM ComboMemory |
| 文件頁數(shù)： | 7/24頁 |
| 文件大?。?/td> | 294K |
| 代理商： | SST31LF041-300-4E-WH |
Data Sheet
2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021 / SST31LF021E
7
2001 Silicon Storage Technology, Inc.
S71137-03-000
10/01 392
TABLE
4: S
OFTWARE
C
OMMAND
S
EQUENCE
Command
Sequence
1st Bus
Write Cycle
Addr
1
5555H
5555H
5555H
5555H
5555H
2nd Bus
Write Cycle
Addr
1
2AAAH
2AAAH
2AAAH
2AAAH
2AAAH
3rd Bus
Write Cycle
Addr
1
5555H
5555H
5555H
5555H
5555H
4th Bus
Write Cycle
Addr
1
BA
2
5555H
5555H
5th Bus
Write Cycle
Addr
1
6th Bus
Write Cycle
Addr
1
Data
AAH
AAH
AAH
AAH
AAH
Data
55H
55H
55H
55H
55H
Data
A0H
80H
80H
90H
F0H
Data
Data
AAH
AAH
Data
Data
Byte-Program
Sector-Erase
Bank-Erase
Software ID Entry
4,5
Software ID Exit
2AAAH
2AAAH
55H
55H
SA
X3
5555H
30H
10H
T4.4 392
1. Address format A
14
-A
0
(Hex),Address A
15,
A
16,
and A
17
can be V
IL
or V
IH
, but no other value, for the Command sequence.
2. BA = Program Byte address
3. SA
X
for Sector-Erase; uses A
17
-A
12
address lines
4. The device does not remain in Software Product ID mode if powered down.
5. With A
17
-A
1
= 0; SST Manufacturer’s ID = BFH, is read with A
0
= 0,
SST31LF021 Device ID = 18H, is read with A
0
= 1,
SST31LF021E Device ID = 19H, is read with A
0
= 1
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-1.0V to V
DD
+1.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
O
PERATING
R
ANGE
: SST31LF021/021E
Range
Commercial
Extended
Ambient Temp
0°C to +70°C
-20°C to +85°C
V
DD
3.0-3.6V
3.0-3.6V
AC C
ONDITIONS
OF
T
EST
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . C
L
= 30 pF
See Figures 14 and 15
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST31LF041-300-4E-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WH | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4E-WH | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4E-WI | 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST31LF041-300-4E-WI | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
| SST31LF041-70-4C-WI | 功能描述:閃存 4M FLASH 1M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST31LF041-70-4C-WIE | 功能描述:閃存 4M FLASH 1M SRAM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST31LF041-70-4E-WH | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory |
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