- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365693 > SST29VF020 (Silicon Storage Technology, Inc.) Small-Sector Flash(小扇區(qū)閃速存儲器) PDF資料下載
參數(shù)資料
| 型號： | SST29VF020 |
| 廠商： | Silicon Storage Technology, Inc. |
| 英文描述： | Small-Sector Flash(小扇區(qū)閃速存儲器) |
| 中文描述： | 小部門閃光（小扇區(qū)閃速存儲器） |
| 文件頁數(shù)： | 3/26頁 |
| 文件大小： | 766K |
| 代理商： | SST29VF020 |
第1頁第2頁當(dāng)前第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁
Preliminary Specifications
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Small-Sector Flash
SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040
SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
3
2002 Silicon Storage Technology, Inc.
S71160-05-000
2/02
505
Data# Polling (DQ
7
)
When the SST29SFxxx and SST29VFxxx devices are in
the internal Program operation, any attempt to read DQ
7
will produce the complement of the true data. Once the
Program operation is completed, DQ
7
will produce true
data. Note that even though DQ
7
may have valid data
immediately following the completion of an internal Write
operation, the remaining data outputs may still be invalid:
valid data on the entire data bus will appear in subse-
quent successive Read cycles after an interval of 1 μs.
During internal Erase operation, any attempt to read DQ
7
will produce a ‘0’. Once the internal Erase operation is
completed, DQ
7
will produce a ‘1’. The Data# Polling is
valid after the rising edge of fourth WE# (or CE#) pulse
for Program operation. For Sector- or Chip-Erase, the
Data# Polling is valid after the rising edge of sixth WE#
(or CE#) pulse. See Figure 7 for Data# Polling timing dia-
gram and Figure 17 for a flowchart.
Toggle Bit (DQ
6
)
During the internal Program or Erase operation, any con-
secutive attempts to read DQ
6
will produce alternating ‘0’s
and ‘1’s, i.e., toggling between 0 and 1. When the internal
Program or Erase operation is completed, the toggling will
stop. The device is then ready for the next operation. The
Toggle Bit is valid after the rising edge of fourth WE# (or
CE#) pulse for Program operation. For Sector or Chip-
Erase, the Toggle Bit is valid after the rising edge of sixth
WE# (or CE#) pulse. See Figure 8 for Toggle Bit timing dia-
gram and Figure 17 for a flowchart.
Data Protection
The SST29SFxxx and SST29VFxxx devices provide both
hardware and software features to protect nonvolatile data
from inadvertent writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than 5
ns will not initiate a Write cycle.
V
DD
Power Up/Down Detection: The Write operation is
inhibited when V
DD
is less than 2.5V for SST29SFxxx. The
Write operation is inhibited when V
DD
is less than 1.5V. for
SST29VFxxx.
Write Inhibit Mode: Forcing OE# low, CE# high, or WE#
high will inhibit the Write operation. This prevents inadvert-
ent writes during power-up or power-down.
Software Data Protection (SDP)
The SST29SFxxx and SST29VFxxx provide the JEDEC
approved Software Data Protection scheme for all data
alteration operations, i.e., Program and Erase. Any Pro-
gram operation requires the inclusion of a series of three-
byte sequence. The three-byte load sequence is used to
initiate the Program operation, providing optimal protection
from inadvertent Write operations, e.g., during the system
power-up or power-down. Any Erase operation requires the
inclusion of a six-byte load sequence. These devices are
shipped with the Software Data Protection permanently
enabled. See Table 4 for the specific software command
codes. During SDP command sequence, invalid com-
mands will abort the device to read mode, within T
RC.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST29VF040-55-4C-NHE | 4 Mbit (x8) Small-Sector Flash |
| SST29VF040-55-4C-WHE | 4 Mbit (x8) Small-Sector Flash |
| SST29VF040-55-4I-NHE | 4 Mbit (x8) Small-Sector Flash |
| SST29VF040-55-4I-WHE | 4 Mbit (x8) Small-Sector Flash |
| SST30VR022-500-C-WH | 2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST29VF020-70-4C-NHE | 功能描述:閃存 2M (256Kx8) 70ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VF020-70-4C-WHE | 功能描述:閃存 256K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VF020-70-4I-WHE | 功能描述:閃存 2M (256Kx8) 70ns 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VF040-70-4C-NH | 功能描述:閃存 512K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VF040-70-4C-NHE | 功能描述:閃存 512K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。