參數(shù)資料
型號(hào)： SST29VF040-55-4C-WHE
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： PROM
英文描述： 4 Mbit (x8) Small-Sector Flash
中文描述： 512K X 8 FLASH 2.7V PROM, 55 ns, PDSO32
封裝： 8 X 14 MM, MO-142BA, TSOP1-32
文件頁(yè)數(shù)： 1/22頁(yè)
文件大?。?/td> 277K
代理商： SST29VF040-55-4C-WHE
2004 Silicon Storage Technology, Inc.
S71160-10-000
1
2/04
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
4 Mbit (x8) Small-Sector Flash
SST29SF040 / SST29VF040
FEATURES:
Organized as 512K x8
Single Voltage Read and Write Operations
– 4.5-5.5V-only for SST29SF040
– 2.7-3.6V for SST29VF040
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
– Active Current: 10 mA (typical)
– Standby Current:
30 μA (typical) for SST29SF040
1 μA (typical) for SST29VF040
Sector-Erase Capability
– Uniform 128 Byte sectors
Fast Read Access Time:
– 55 ns for SST29SF040
– 55 ns and 70 ns for SST29VF040
Latched Address and Data
Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 μs (typical)
– Chip Rewrite Time: 8 seconds (typical)
Automatic Write Timing
– Internal V
PP
Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
TTL I/O Compatibility for SST29SF040
CMOS I/O Compatibility for SST29VF040
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
PRODUCT DESCRIPTION
The SST29SF040 and SST29VF040 are 512K x8 CMOS
Small-Sector Flash (SSF) manufactured with SST’s propri-
etary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST29SF040 devices write
(Program or Erase) with a 4.5-5.5V power supply. The
SST29VF040 devices write (Program or Erase) with a 2.7-
3.6V power supply. These devices conform to JEDEC
standard pinouts for x8 memories.
Featuring
SST29SF040 and SST29VF040 devices provide a maxi-
mum Byte-Program time of 20 μsec. To protect against
inadvertent write, they have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of at
least 10,000 cycles. Data retention is rated at greater than
100 years.
high
performance
Byte-Program,
the
The SST29SF040 and SST29VF040 devices are suited
for applications that require convenient and economical
updating of program, configuration, or data memory. For
all system applications, they significantly improve perfor-
mance and reliability, while lowering power consumption.
They inherently use less energy during Erase and Pro-
gram than alternative flash technologies. The total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed dur-
ing any Erase or Program operation is less than alternative
flash technologies. They also improve flexibility while low-
ering the cost for program, data, and configuration storage
applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
To meet high density, surface mount requirements, the
SST29SF040 and SST29VF040 devices are offered in 32-
lead PLCC and 32-lead TSOP packages. See Figures 1
and 2 for pin assignments.
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on
the rising edge of WE# or CE#, whichever occurs first.
SST29SF/VF0404Mb (x8) Byte-Program, Small-Sector flash memories
相關(guān)PDF資料
PDF描述
SST29VF040-55-4I-NHE 4 Mbit (x8) Small-Sector Flash
SST29VF040-55-4I-WHE 4 Mbit (x8) Small-Sector Flash
SST30VR022-500-C-WH 2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo
SST304 Input/Output (I/O); Supply Voltage: 2.4V to 5.5V; Temperature Range: -40° to +85°C; Package: 16-QFN (16-COL); Features: 10 Configurable I/Os
SST305 Input/Output (I/O); Supply Voltage: 2.4V to 5.5V; Temperature Range: -40° to +85°C; Package: 16-SOIC; Features: 10 Configurable I/Os
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST29VF040-70-4C-NH 功能描述:閃存 512K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VF040-70-4C-NHE 功能描述:閃存 512K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VF040-70-4C-WH 功能描述:閃存 512K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VF040-70-4C-WHE 功能描述:閃存 512K X 8 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VF040-70-4I-NHE 功能描述:閃存 512K x 8 70ns INDUSTRIAL TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*