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參數資料
| 型號： | SST29VF020 |
| 廠商： | Silicon Storage Technology, Inc. |
| 英文描述： | Small-Sector Flash(小扇區(qū)閃速存儲器) |
| 中文描述： | 小部門閃光（小扇區(qū)閃速存儲器） |
| 文件頁數： | 1/26頁 |
| 文件大?。?/td> | 766K |
| 代理商： | SST29VF020 |
2002 Silicon Storage Technology, Inc.
S71160-05-000
2/02
1
505
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
Small-Sector Flash and SSF are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Preliminary Specifications
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040
SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040
FEATURES:
Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
Single Voltage Read and Write Operations
– 4.5-5.5V-only for SST29SF512/010/020/040
– 2.7-3.6V for SST29VF512/010/020/040
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
– Active Current: 10 mA (typical)
– Standby Current:
30 μA (typical) for SST29SF512/010/020/040
1 μA (typical) for SST29VF512/010/020/040
Sector-Erase Capability
– Uniform 128 Byte sectors
Fast Read Access Time:
– 55 ns
– 70 ns
Latched Address and Data
Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 μs (typical)
– Chip Rewrite Time:
1 second (typical) for SST29SF/VF512
2 seconds (typical) for SST29SF/VF010
4 seconds (typical) for SST29SF/VF020
8 seconds (typical) for SST29SF/VF040
Automatic Write Timing
– Internal V
PP
Generation
End-of-Write Detection
– Toggle Bit
– Data# Polling
TTL I/O Compatibility for SST29SFxxx
CMOS I/O Compatibility for SST29VFxxx
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 32-pin PDIP
PRODUCT DESCRIPTION
The SST29SF512/010/020/040 and SST29VF512/010/
020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS
Small-Sector Flash (SSF) manufactured with SST’s propri-
etary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST29SFxxx devices write
(Program or Erase) with a 4.5-5.5V power supply. The
SST29VFxxx devices write (Program or Erase) with a 2.7-
3.6V power supply. These devices conform to JEDEC stan-
dard pinouts for x8 memories.
Featuring
SST29SFxxx and SST29VFxxx devices provide a maxi-
mum Byte-Program time of 20 μsec. To protect against
inadvertent write, they have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of at least
10,000 cycles. Data retention is rated at greater than 100
years.
high
performance
Byte-Program,
the
The SST29SFxxx and SST29VFxxx devices are suited for
applications that require convenient and economical updat-
ing of program, configuration, or data memory. For all sys-
tem applications, they significantly improve performance
and reliability, while lowering power consumption. They
inherently use less energy during Erase and Program than
alternative flash technologies. The total energy consumed
is a function of the applied voltage, current, and time of
application. Since for any given voltage range, the Super-
Flash technology uses less current to program and has a
shorter erase time, the total energy consumed during any
Erase or Program operation is less than alternative flash
technologies. They also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST29SFxxx and SST29VFxxx devices are offered in 32-
lead PLCC and 32-lead TSOP packages. A 600 mil, 32-pin
PDIP is also offered for SST29SFxxx devices. See Figures
1, 2, and 3 for pinouts.
SST29SF/VF512 / 010 / 020 / 040512Kb / 1Mb / 2Mb / 4Mb (x8)
Byte-Program, Small Erase Sector flash memories
相關PDF資料 |
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| SST29VF040-55-4C-NHE | 4 Mbit (x8) Small-Sector Flash |
| SST29VF040-55-4C-WHE | 4 Mbit (x8) Small-Sector Flash |
| SST29VF040-55-4I-NHE | 4 Mbit (x8) Small-Sector Flash |
| SST29VF040-55-4I-WHE | 4 Mbit (x8) Small-Sector Flash |
| SST30VR022-500-C-WH | 2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SST29VF020-70-4C-NHE | 功能描述:閃存 2M (256Kx8) 70ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VF020-70-4C-WHE | 功能描述:閃存 256K X 8 70ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VF020-70-4I-WHE | 功能描述:閃存 2M (256Kx8) 70ns 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VF040-70-4C-NH | 功能描述:閃存 512K X 8 70ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VF040-70-4C-NHE | 功能描述:閃存 512K X 8 70ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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