參數(shù)資料
型號(hào)： SSM3J02F
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
中文描述： 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山類型
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 164K
代理商： SSM3J02F
SSM3J02F
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02F
Power Management Switch
High Speed Switching Applications
Small package
Low on resistance : R
on
= 0.5
(max) (@V
GS
=
4 V)
: R
on
= 0.7
(max) (@V
GS
=
2.5 V)
Low gate threshold voltage
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
30
V
Gate-source voltage
V
GSS
10
V
DC
I
D
600
Drain current
Pulse
I
DP
1200
mA
Drain power dissipation (Ta 25°C)
P
D
200
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
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