型號: | SSM3J05FU |
廠商: | Toshiba Corporation |
英文描述: | Power Management Switch High Speed Switching Applications |
中文描述: | 電源管理開關高速開關應用 |
文件頁數(shù): | 1/5頁 |
文件大小: | 176K |
代理商: | SSM3J05FU |
相關PDF資料 |
PDF描述 |
---|---|
SSM3J09FU | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type |
SSM3J108TU | Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications |
SSM3J109TU | Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications |
SSM3J110TU | Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications |
SSM3J111TU | Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications |
相關代理商/技術參數(shù) |
參數(shù)描述 |
---|---|
SSM3J09FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P Channel MOS Type |
SSM3J108TU | 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
SSM3J108TU(TE85L) | 功能描述:MOSFET Vds=-20V Id=-1.8A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
SSM3J109TU | 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
SSM3J109TU(TE85L) | 功能描述:MOSFET Vds=-20V Id=-2A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |