參數(shù)資料
型號(hào)： SSM3J09FU
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
中文描述： 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山類型
文件頁數(shù)： 1/5頁
文件大小： 249K
代理商： SSM3J09FU
SSM3J09FU
2002-01-16
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J09FU
Management Switch
High Speed Switching Applications
Small package
Low on resistance R
on
= 2.7
(max) (@V
GS
=
1
0 V)
: R
on
= 4.2
(max) (@V
GS
=
4 V)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
20
V
DC
I
D
200
Drain current
Pulse
I
DP
400
mA
Drain power dissipation (Ta 25 C)
P
D
(Note1)
150
mW
Channel temperature
T
ch
150
C
Storage temperature
T
stg
55~150
C
Note 1: Mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.6 mm
2
3) Figure 1.
Marking
Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
0.6 mm
1.0 mm
D K
1
2
3
1
2
3
Figure 1: 25.4 mm 25.4 mm 1.6 t,
Cu Pad: 0.6 mm
2
3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SSM3J108TU 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3J108TU(TE85L) 功能描述:MOSFET Vds=-20V Id=-1.8A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3J109TU 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3J109TU(TE85L) 功能描述:MOSFET Vds=-20V Id=-2A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3J110TU 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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