參數(shù)資料
型號(hào)： SSM3J109TU
廠商： Toshiba Corporation
英文描述： Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications
中文描述： 場(chǎng)效應(yīng)晶體管硅P溝道MOS開(kāi)關(guān)式電源管理應(yīng)用高速開(kāi)關(guān)應(yīng)用
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 207K
代理商： SSM3J109TU
SSM3J109TU
2007-11-01
1
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J109TU
○
Power Management Switch Applications
○
High-Speed Switching Applications
1.8 V drive
Low ON-resistance:
R
on
= 300 m
(max) (@V
GS
= -1.8 V)
R
on
= 172 m
(max) (@V
GS
= -2.5 V)
R
on
= 130 m
(max) (@V
GS
= -4.0 V)
Absolute Maximum Ratings (Ta = 25
C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
-20
±
8
-2
-4
V
V
DC
Pulse
Drain current
A
800
Drain power dissipation
P
D
(Note 2)
500
mW
Channel temperature
Storage temperature
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on a ceramic board
(25.4 mm
×
25.4 mm
×
0.8 t, Cu Pad: 645 mm
2
)
Note 2: Mounted on an FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Electrical Characteristics
(Ta
=
25°C)
T
ch
T
stg
150
°
C
°
C
55~150
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
(BR) DSS
V
(BR) DSX
I
DSS
I
D
=
-1 mA, V
GS
=
0
I
D
=
-1 mA, V
GS
=
+
8 V
V
DS
=
-20 V, V
GS
=
0
-20
Drain-source breakdown voltage
-12
V
Drain cutoff current
-10
μ
A
Gate leakage current
I
GSS
V
GS
=
±
8
V, V
DS
=
0
±
1
μ
A
Gate threshold voltage
V
th
V
DS
=
-3 V, I
D
=
-1 mA
-0.3
-1.0
V
Forward transfer admittance
Y
fs
V
DS
=
-3 V, I
D
=
-1 A
(Note 3)
2.4
4
S
I
D
=
-1.0 A, V
GS
=
-4 V
I
D
=
-0.5 A, V
GS
=
-2.5 V
I
D
=
-0.2 A, V
GS
=
-1.8 V
V
DS
=
-10 V, V
GS
=
0, f
=
1 MHz
(Note 3)
91
130
(Note 3)
(Note 3)
123
175
172
300
Drain-source ON-resistance
R
DS (ON)
m
Ω
Input capacitance
C
iss
335
pF
Output capacitance
C
oss
V
DS
=
-10 V, V
GS
=
0, f
=
1 MHz
70
pF
Reverse transfer capacitance
C
rss
V
DS
=
-10 V, V
GS
=
0, f
=
1 MHz
56
pF
Turn-on time
t
on
20
Switching time
Turn-off time
t
off
V
DD
=
-10 V, I
D
=
-1A,
V
GS
=
0 ~ -2.5 V, R
G
=
4.7
Ω
20
ns
Drain-source forward voltage
V
DSF
I
D
=
2 A, V
GS
=
0
(Note 3)
0.85
1.2
V
Note 3: Pulse test
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
1. Gate
2. Source
3. Drain
-
0
1.7±0.1
2.1±0.1
0
1
2
2
3
0
+
0
UFM
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SSM3J110TU(TE85L) 功能描述:MOSFET Vds=-12V Id=-2.3A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3J111TU 功能描述:MOSFET INCORRECT MOUSER P/N 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SSM3J111TU(TE85L) 功能描述:MOSFET Vds=-20V Id=-1A 3Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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