參數(shù)資料
型號(hào)： SSM3J02T
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
中文描述： 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山類(lèi)型
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 147K
代理商： SSM3J02T
SSM3J02T
2002-01-17
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02T
Power Management Switch
High Speed Switching Applications
Component package suitable for high-density mounting
Small Package
Low ON Resistance : R
on
= 0.5
(max) (@V
GS
=
4 V)
: R
on
= 0.7
(max) (@V
GS
=
2.5 V)
Low-voltage operation possible
Maximum Ratings
(Ta 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
V
DS
V
GSS
I
D
I
DP
(Note2)
P
D
(Note1)
T
ch
T
stg
30
10
1.5
V
V
DC
Drain current
Pulse
3.0
A
Drain power dissipation (Ta 25 C)
1250
mW
Channel temperature
Storage temperature range
150
C
C
55 to 150
Note1: Mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm2, t 10 s)
Note2: The pulse width limited by max channel temperature.
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
D D
3
1
2
3
1
2
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參數(shù)描述
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