參數(shù)資料
型號(hào): SSM3J01T
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
中文描述: 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山類型
文件頁數(shù): 1/5頁
文件大?。?/td> 169K
代理商: SSM3J01T
SSM3J01T
2002-01-16
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J01T
Power Management Switch
High Speed Switching Applications
Small Package
Low on Resistance R
on
= 0.4
(max) (@V
GS
=
4 V)
: R
on
= 0.6
(max) (@V
GS
=
2.5 V)
Low Gate Threshold Voltage
Maximum Ratings
(Ta 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
V
DS
V
GSS
I
D
I
DP
(Note2)
P
D
(Note1)
T
ch
T
stg
30
10
1.7
V
V
DC
Drain current
Pulse
3.4
A
Drain power dissipation (Ta 25 C)
1250
mW
Channel temperature
Storage temperature range
150
55~150
C
C
Note 1: Mounted on FR4 board
(25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm
2
, t 10 s)
Note 2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
th (ch-a)
and the drain power dissipation P
D
vary according to the
board material, board area, board thickness and pad area, and are also affected by the environment in which the
product is used. When using this device, please take heat dissipation fully into account.
Marking
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
3
1
2
D E
3
1
2
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