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參數(shù)資料
| 型號(hào)： | SMC9-65608EV-45SB |
| 廠商： | TEMIC SEMICONDUCTORS |
| 元件分類： | Static RAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 45 ns, DIP32 |
| 封裝： | 0.400 INCH, SIDE BRAZED, DIP-32 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 159K |
| 代理商： | SMC9-65608EV-45SB |
M65608E
Rev. E – June 5, 2000
1
Introduction
The M65608E is a very low power CMOS static RAM
organized as 131072
× 8 bits.
TEMIC brings the solution to applications where fast
computing is as mandatory as low consumption, such as
aerospace
electronics,
portable
instruments,
or
embarked systems.
Utilizing an array of six transistors (6T) memory cells,
the M65608E combines an extremely low standby
supply current (Typical value = 0.2
A) with a fast
access time at 30 ns over the full military temperature
range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of
the latest revision of the MIL STD 883 (class B or S),
ESA SCC 9000 or QML.
Features
D Access time: 30, 45 ns
D Very low power consumption
active : 250 mW (Typ)
standby : 1
W (Typ)
data retention : 0.5
W (Typ)
D Wide temperature Range : –55 To +125°C
D 400 Mils width package
D TTL compatible inputs and outputs
D Asynchronous
D Single 5 volt supply
D Equal cycle and access time
D Gated inputs :
no pull-up/down
resistors are required
Interface
Block Diagram
128 K
8 Very Low Power CMOS SRAM Rad Tolerant
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