
ICODE
1 Chip Specification
Rev. 2.1
May 2000
SL040521.doc/M
Public
Page 15 of 22
13 Electrical Specifications
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
PARAMETER
TEST
CONDITIONS
RATING
UNIT
T
stg
T
j
Storage Temperature Range
Junction Temperature
- 55 to
+
140
- 55 to
+
140
°C
°C
V
ESD
I
max LA-LB
Maximum Input Peak Current
NOTES:
1.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any conditions other than those described in the Operating Conditions and
Electrical Characteristics section of this specification is not implied.
2.
This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima.
ESD Voltage Immunity
MIL-STD-883D,
Method 3015.7,
Human Body Model
± 2
kV
peak
mA
peak
± 60
OPERATING CONDITIONS
SYMBOL
PARAMETER
TEST
CONDITIONS
MIN
TYP
1
MAX
UNIT
T
amb
T
j op
I
LA-LB
Operating Ambient Temperature
Operating Junction Temperature
Input Current
Minimum Supply Voltage
2
for READ/EAS
Minimum Supply Voltage
2
for WRITE
Minimum Supply Voltage
2
for READ/EAS/WRITE
Operating Frequency
3
- 25
- 25
+
70
+
85
30
°C
°C
mA
rms
V
LA-LB rd
Standard Mode
± 3.1
± 3.7
V
peak
V
LA-LB wr
Standard Mode
± 3.6
± 4.1
V
peak
V
LA-LB fm
f
op
NOTES:
1.
Typical ratings are not guaranteed. These values listed are at room temperature.
2.
The voltage between LA and LB is limited by the on-chip voltage limitation circuitry (corresponding to parameter I
LA-LB
).
3.
Bandwidth limitation (±7 kHz) according to ISM band regulations.
Fast Mode
± 5.2
13.560
± 6.5
13.567
V
peak
MHz
13.553
ELECTRICAL CHARACTERISTICS
T
amb
= - 25 to +70 °C
SYMBOL
PARAMETER
TEST
CONDITIONS
V
LA-LB
= 2 V
rms
V
LA-LB
= 2 V
rms
V
V
max
V
V
max
Standard Mode,
m
≥
10 %
Fast Mode,
m
≥
10 %
m
≥
10 %
I
LA-LB
= 30 mA
T
amb
≤
55 °C
MIN
TYP
1
MAX
UNIT
C
res
P
min
Input Capacitance between LA - LB
2
Minimum Operating Supply Power
3
Minimum Modulation of RF Voltage
for Demodulator Response
Maximum Modulation of RF Voltage
for Demodulator Response
Modulation Pulse Length
of RF Voltage
Modulation Start-Pulse Length
of RF Voltage
4
Demodulator Response Time
Modulator ON Resistance
EEPROM Data Retention
EEPROM Write Endurance
22.3
23.5
200
24.7
pF
μW
m
min
m
- V
+ V
- V
+ V
max
min
min
=
10
14
%
m
max
m
max
min
min
=
30
%
t
P sm
3.54
5.31
5
9.44
μs
t
P fm
t
D
R
mod
t
ret
n
write
15.34
17.11
5
21.24
μs
0.1
50
10
0.8
115
2.4
250
μs
Years
Cycles
100 000
NOTES:
1.
Typical ratings are not guaranteed. These values listed are at room temperature.
2.
Measured with an HP4285A LCR meter at 13.56 MHz.
3.
Including losses in resonant capacitor and rectifier.
4.
The given values are derived from the 13.56 MHz system frequency.
5.
Recommended values for pulse duration generated at the read/write device.