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參數資料
| 型號： | SI9802DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel Reduced Qg, Fast Switching MOSFET |
| 中文描述： | 雙N溝道減少Qg和，快速開關MOSFET |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | SI9802DY |
Si9802DY
Vishay Siliconix
Document Number: 70625
S-51303—Rev. A, 19-Dec-96
www.vishay.com FaxBack 408-970-5600
3
0
5
10
15
20
25
0
2
4
6
8
10
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
– Drain-to-Source Voltage (V)
–
I
D
V
GS
– Gate-to-Source Voltage (V)
–
I
D
–
Q
g
– Total Gate Charge (nC)
V
DS
– Drain-to-Source Voltage (V)
C
V
G
–
r
D
)
I
D
– Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
– Junction Temperature ( C)
(
–
r
D
)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
1
2
3
4
5
6
0
0.4
0.8
1.2
1.6
2.0
–50
0
50
100
150
0
0.05
0.10
0.15
0.20
0.25
0.30
0
5
10
15
20
25
0
300
600
900
1200
0
4
8
12
16
20
0
5
10
15
20
25
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
125 C
C
rss
C
oss
C
iss
V
GS
= 4.5 V
T
C
= –55 C
V
DS
= 10 V
I
D
= 4.5 A
V
GS
= 4.5 V
I
D
= 4.5 A
V
GS
= 5 thru 3.5 V
2.5 V
3 V
25 C
V
GS
= 3 V
2 V
1.5 V
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