參數(shù)資料
型號： SI9802DY
廠商： Vishay Intertechnology,Inc.
英文描述： Dual N-Channel Reduced Qg, Fast Switching MOSFET
中文描述： 雙N溝道減少Q(mào)g和，快速開關(guān)MOSFET
文件頁數(shù)： 2/4頁
文件大?。?/td> 51K
代理商： SI9802DY
Si9802DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2
Document Number: 70625
S-51303—Rev. A, 19-Dec-96
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
A
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 5 V
25
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 4.5 A
0.044
0.055
V
GS
= 3.0
V, I
D
= 3.8 A
0.055
0.075
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 4.5 A
11.5
S
Diode Forward Voltage
a
V
SD
I
S
=1.7 A, V
GS
= 0 V
0.73
1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 10 V V
V
GS
= 4.5 V, I
D
= 4.5 A
4 5 V I
4 5 A
5.5
10
Gate-Source Charge
Q
gs
1.2
nC
Gate-Drain Charge
Q
gd
1.5
Turn-On Delay Time
t
d(on)
V
= 10 ,
= 10
1 A V
1 A, V
GEN
= 4.5 V, R
G
= 6
12
25
Rise Time
t
r
I
D
4 5 V R
30
60
Turn-Off Delay Time
t
d(off)
23
50
ns
Fall Time
t
f
9
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ s
60
100
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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