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參數(shù)資料
| 型號(hào)： | SI9428DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | N溝道的2.5 V（GS）的MOSFET的 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 38K |
| 代理商： | SI9428DY |
Si9428DY
Vishay Siliconix
www.vishay.com
2
Document Number: 70810
S-03950—Rev. C, 26-May-03
MOSFET SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static-0.6
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
A
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
20
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 6 A
0.023
0.03
V
GS
= 2.5 V, I
D
= 5.2 A
0.028
0.04
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 6 A
24
S
Diode Forward Voltage
a
V
SD
I
S
= 1.7 A, V
GS
= 0 V
0.75
1.2
V
Dynamic
b
Total Gate Charge
Q
g
21
40
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 6 A
2.9
nC
Gate-Drain Charge
Q
gd
6.5
Gate Resistance
R
g
1
3.4
Turn-On Delay Time
t
d(on)
30
60
Rise Time
t
r
V
= 10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
G
= 6
70
140
Turn-Off Delay Time
t
d(off)
I
D
70
140
ns
Fall Time
t
f
30
60
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ s
70
100
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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