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參數(shù)資料
| 型號(hào)： | SI7844DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Ch MOSFET plus Schottky diode, |
| 中文描述： | 雙N溝道MOSFET帶肖特基二極管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | SI7844DP |
Si7844DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71328
S-02456
—
Rev. A, 06-Nov-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.8
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 24 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 10
V
5
A
On-State Drain Current
a
I
D(on)
V
DS
20
A
V
GS
= 10
V, I
D
= 10 A
0.018
0.022
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 8.5 A
0.024
0.030
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 10 A
22
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.75
1.2
V
Dynamic
b
Total Gate Charge
Q
g
13
20
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 10 A
2
nC
Gate-Drain Charge
Q
gd
2.7
Turn-On Delay Time
t
d(on)
8
16
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
10
20
Turn-Off Delay Time
t
d(off)
I
D
21
40
ns
Fall Time
t
f
10
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
40
80
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 10 thru 4 V
T
C
= 125 C
–
55 C
2 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
–
Drain-to-Source Voltage (V)
–
I
D
V
GS
–
Gate-to-Source Voltage (V)
–
I
D
3 V
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