參數(shù)資料
型號(hào): SI7705DN
廠商: Vishay Intertechnology,Inc.
元件分類(lèi): MOSFETs
英文描述: P-Channel 20-V (D-S) MOSFET,Low-Threshold
中文描述: P通道20V(D-S)MOSFET 低閾值
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 55K
代理商: SI7705DN
Si7705DN
Vishay Siliconix
New Product
Document Number: 71607
S-22520
Rev. B, 27-Jan-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
MOSFET
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.00
0.04
0.08
0.12
0.16
0.20
0
4
8
12
16
20
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
400
800
1200
1600
2000
0
4
8
12
16
20
V
GS
= 5 thru 2.5 V
25 C
T
C
= -55 C
C
rss
C
oss
C
iss
V
GS
= 4.5 V
V
GS
= 2.5 V
125 C
1.5 V
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
V
DS
- Drain-to-Source Voltage (V)
C
-
r
D
)
I
D
- Drain Current (A)
Capacitance
V
GS
= 1.8 V
2 V
1, 0.5 V
0
2
4
6
8
0
3
6
9
12
15
18
21
0.7
0.9
1.1
1.3
1.5
-50
-25
0
25
50
75
100
125
150
V
DS
= 10 V
I
D
= 6.3 A
V
GS
= 4.5 V
I
D
Gate Charge
-
Q
g
- Total Gate Charge (nC)
V
G
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature ( C)
(
-
r
D
)
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