參數(shù)資料
型號(hào)： SI7705DN
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： P-Channel 20-V (D-S) MOSFET,Low-Threshold
中文描述： P通道20V（D-S）MOSFET 低閾值
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 55K
代理商： SI7705DN
Si7705DN
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71607
S-22520
—
Rev. B, 27-Jan-03
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
MOSFET
35
44
t
10 sec
Schottky
51
64
Junction-to-Ambient
a
MOSFET
R
thJA
75
94
Steady State
Schottky
91
115
C/W
MOSFET
4
5
Junction-to-Case (Drain)
Steady State
Schottky
R
thJC
10
12
Notes
a.
Surface Mounted on 1
”
x 1
”
FR4 Board.
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
V
DS
= -16 V, V
GS
= 0 V
V
DS
= -16 V, V
GS
= 0 V, T
J
= 85 C
V
DS
-5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -6.3 A
V
GS
= -2.5 V, I
D
=
-5.3 A
V
GS
= -1.8 V, I
D
=
-1 A
-1
Zero Gate Voltage Drain Current
I
DSS
-5
A
On-State Drain Current
a
I
D(on)
-20
A
0.040
0.048
Drain-Source On-State Resistance
a
r
DS(on)
0.054
0.068
0.070
0.090
Forward Transconductance
a
g
fs
V
SD
V
DS
= -10 V, I
D
= -6.3 A
I
S
= -2.3 A, V
GS
= 0 V
14
S
Diode Forward Voltage
a
-0.8
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
11
17
Gate-Source Charge
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
= -10 V,
V
= -4.5 V, I
= -6.3 A
DS
GS
2.7
nC
Gate-Drain Charge
D
1.9
Turn-On Delay Time
70
105
Rise Time
V
= -10 V, R
= 10
-1 A, V
GEN
= -4.5 V, R
G
= 6
75
110
Turn-Off Delay Time
I
D
20
30
ns
Fall Time
45
70
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
I
F
= 0.5 A
0.42
0.48
Forward Voltage Drop
V
F
I
F
= 0.5 A, T
J
= 125 C
V
r
= 20 V
V
r
= 20 V, T
J
= 85 C
V
r
= 20 V, T
J
= 125 C
V
r
= 10 V
0.33
0.4
V
0.002
0.100
Maximum Reverse Leakage Current
I
rm
0.10
1
mA
1.5
10
Junction Capacitance
C
T
31
pF
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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SI7705DN-T1-E3 功能描述:MOSFET 20V 6.3A 2.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7716ADN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI7716ADN-T1-GE3 功能描述:MOSFET 30V 16A 27.7W 13.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7718DN-T1-GE3 功能描述:MOSFET 30V 35A 52W 6.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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