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參數(shù)資料
| 型號： | SI7478DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET |
| 中文描述： | N通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 231K |
| 代理商： | SI7478DP |
www.vishay.com
2
Document Number: 72913
S-51566-Rev. B, 07-Nov-05
Vishay Siliconix
Si7478DP
New Product
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless noted
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Symbol
Test Condition
Min
Typ
Max
Unit
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55°C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 18.5 A
V
DS
= 15 V, I
D
= 20 A
I
S
= 4.5 A, V
GS
= 0 V
1.0
3.0
V
Gate-Body Leakage
±100
nA
Zero Gate Voltage Drain Current
I
DSS
1
μA
5
On-State Drain Current
a
I
D(on)
40
A
Drain-Source On-State Resistance
a
r
DS(on)
0.006
0.0075
0.007
0.0088
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
g
fs
V
SD
63
S
0.76
1.2
V
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
V
DS
= 30 V, V
GS
= 10 V, I
D
= 20 A
105
160
nC
Gate-Source Charge
22
Gate-Drain Charge
19
Gate Resistance
0.5
1.0
1.5
Turn-On Delay Time
V
DD
= 30 V, R
L
= 30
I
D
1 A, V
GEN
= 10 V, R
G
= 6
25
40
ns
Rise Time
20
30
Turn-Off Delay Time
115
175
Fall Time
45
70
Source-Drain Reverse Recovery Time
I
F
= 4.5 A, di/dt = 100 A/μs
41
70
Output Characteristics
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 10 thru 4 V
3 V
V
DS
- Drain-to-Source Voltage (V)
-
I
D
Transfer Characteristics
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
25
C
T
C
= 125
C
- 55
C
V
GS
- Gate-to-Source Voltage (V)
-
I
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7478DP-T1-E3 | 功能描述:MOSFET 60V 20A 5.4W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7478DP-T1-GE3 | 功能描述:MOSFET 60V 20A 5.4W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7483ADP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI7483ADP-T1-E3 | 功能描述:MOSFET 30V 24A 5.4W 5.7mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7483ADP-T1-GE3 | 功能描述:MOSFET 30V 24A 5.4W 5.7mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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