參數(shù)資料
型號(hào): Si7501DN
廠商: Vishay Intertechnology,Inc.
英文描述: N- and p-channel VDS = 30 V pair
中文描述: NP溝道 VDS=30V 配對(duì);
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 87K
代理商: SI7501DN
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
APPLICATIONS
Backlight Inverter
DC/DC Converter
4-Cell Battery
Si7501DN
Vishay Siliconix
Document Number: 72173
S-32419—Rev. B, 24-Nov-03
www.vishay.com
1
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
P-Channel
30
0.051 @ V
GS
=
10 V
6.4
0.075 @ V
GS
=
6 V
5.3
N Channel
N-Channel
30
0.035 @ V
GS
= 10 V
7.7
0.050 @ V
GS
= 4.5 V
6.5
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D
D
D
D
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
G
2
S
2
S
1
G
1
D
Ordering Information: Si7501DN-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
P-Channel
N-Channel
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
30
V
Gate-Source Voltage
V
GS
25
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
6.4
4.5
7.7
5.4
T
A
= 70 C
5.1
3.6
4.7
4.3
A
Pulsed Drain Current
I
DM
25
25
Continuous Source Current (Diode Conduction)
a
I
S
2.6
1.3
2.6
1.3
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.1
1.6
3.1
1.6
W
T
A
= 70 C
3
1.0
2
1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
32
40
Steady State
65
81
C/W
Maximum Junction-to-Foot (Case)
Steady State
R
thJC
5
6.3
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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