參數(shù)資料
型號: Si7501DN
廠商: Vishay Intertechnology,Inc.
英文描述: N- and p-channel VDS = 30 V pair
中文描述: NP溝道 VDS=30V 配對;
文件頁數(shù): 4/8頁
文件大?。?/td> 87K
代理商: SI7501DN
Si7501DN
Vishay Siliconix
www.vishay.com
4
Document Number: 72173
S-32419—Rev. B, 24-Nov-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
PCHANNEL
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.04
0.08
0.12
0.16
0
2
4
6
8
10
T
J
= 150 C
I
D
= 6.4 A
30
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r
D
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
S
T
J
= 25 C
0
30
50
10
20
P
Single Pulse Power
Time (sec)
40
0.4
0.2
0.0
0.2
0.4
0.6
50
25
0
25
50
75
100
125
150
I
D
= 250 A
Threshold Voltage
V
V
G
T
J
Temperature ( C)
1
100
600
10
10
1
10
2
10
3
Safe Operating Area
V
DS
Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
T
= 25 C
Single Pulse
I
D
P(t) = 10
dc
0.1
I
DM
Limited
I
Limited
r
DS(on)
Limited
BV
DSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
相關(guān)PDF資料
PDF描述
SI7601DN P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI7664DP Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI7705DN P-Channel 20-V (D-S) MOSFET,Low-Threshold
SI7802DN N-Channel 250-V (D-S) MOSFET
SI7806BDN N-Channel 30-V (D-S) Fast Switching MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7501DN-T1-E3 功能描述:MOSFET COMPLEMENTARY 30-V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7501DN-T1-GE3 功能描述:MOSFET N/P-Ch MOSFET 30V 51/35mohoms @10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI-7502 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:5-Phase Stepper Motor Driver ICs
SI750K 制造商:Thomas & Betts 功能描述:TWO PIECE SPLICE 750P1 AUTO SEIZE 制造商:Belden Inc 功能描述:
SI750K3 制造商:Thomas & Betts 功能描述:SPLICE AUTO SEIZE 制造商:Belden Inc 功能描述: