參數(shù)資料
型號(hào): SI7485DP-T1
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 20-V (D-S) MOSFET, Low-Threshold
中文描述: P通道20 - V(下局副局長)MOSFET的低閾值
文件頁數(shù): 1/5頁
文件大小: 77K
代理商: SI7485DP-T1
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
APPLICATIONS
Battery Switch for Portable Devices
Si7485DP
Vishay Siliconix
New Product
Document Number: 72275
S-31416—Rev. A, 07-Jul-03
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.0073 @ V
GS
= -4.5 V
-20
-20
0.0090 @ V
GS
= -2.5 V
-18
0.013 @ V
GS
= -1.8 V
-15
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
S
G
D
P-Channel MOSFET
Ordering Information: Si7485DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-20
-12.5
T
A
= 70 C
-16.5
-9.5
A
Pulsed Drain Current
I
DM
-50
continuous Source Current (Diode Conduction)
a
I
S
-4.5
-1.6
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5
1.8
W
T
A
= 70 C
3.2
1.1
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
20
25
Steady State
54
68
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.7
2.2
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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