參數(shù)資料
型號: SI7485DP-T1
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 20-V (D-S) MOSFET, Low-Threshold
中文描述: P通道20 - V(下局副局長)MOSFET的低閾值
文件頁數(shù): 4/5頁
文件大小: 77K
代理商: SI7485DP-T1
Si7485DP
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72275
S-31416—Rev. A, 07-Jul-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 1 mA
Threshold Voltage
V
V
G
T
J
- Temperature ( C)
10
-3
10
-2
1
10
600
10
-1
10
-4
100
0.001
0
1
80
100
20
10
0.01
Single Pulse Power, Juncion-To-Ambient
Time (sec)
60
40
P
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
0.1
Safe Operating Area, Junction-to-Case
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
-
I
D
0.1
Limited by r
DS(on)
T
= 25 C
Single Pulse
10 ms
100 ms
dc
1 ms
10 s
1 s
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