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參數(shù)資料
| 型號： | SI7485DP-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 77K |
| 代理商： | SI7485DP-T1 |
Si7485DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72275
S-31416—Rev. A, 07-Jul-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -1 mA
-0.4
-0.9
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -16 V, V
GS
= 0 V
-1
A
V
DS
= -16 V, V
GS
= 0 V, T
J
= 70 C
-10
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -4.5 V
-40
A
V
GS
= -4.5 V, I
D
= -20 A
0.006
0.0073
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -18 A
0.0074
0.0090
V
GS
= -1.8 V, I
D
= -15 A
0.0106
0.013
Forward Transconductance
a
g
fs
V
DS
= -15
V, I
D
= -20 A
80
S
Diode Forward Voltage
a
V
SD
I
S
= -4.5 A, V
GS
= 0 V
-0.62
-1.1
V
Dynamic
b
Total Gate Charge
Q
g
99
150
Gate-Source Charge
Q
gs
V
DS
= -10 V,
V
GS
= -5 V, I
D
= -20 A
11.5
nC
Gate-Drain Charge
Q
gd
29
Gate-Resistance
R
G
2.4
Turn-On Delay Time
t
d(on)
80
120
Rise Time
t
r
V
= -10 V, R
= 10
-1 A, V
GEN
= -4.5 V, R
G
= 6
140
210
Turn-Off Delay Time
t
d(off)
I
D
360
540
ns
Fall Time
t
f
170
260
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.9 A, di/dt = 100 A/ s
55
80
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
0.00
10
20
30
40
50
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
10
20
30
40
50
0
1
2
3
4
5
V
GS
= 5 thru 2 V
T
C
= 125 C
-55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
1.5 V
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