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| 型號： | SI7478DP-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET |
| 中文描述： | N通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 231K |
| 代理商： | SI7478DP-T1-E3 |
Vishay Siliconix
Si7478DP
New Product
Document Number: 72913
S-51566-Rev. B, 07-Nov-05
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
FEATURES
TrenchFET
Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
100 % R
g
Tested
APPLICATIONS
Automotive Such As:
- High-Side Switch
- Motor Drives
- 12-V Boardnet
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
60
0.0075 @ V
GS
= 10 V
20
0.0088 @ V
GS
= 4.5 V
18.5
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom V
ie
w
Ordering Information:
Si7478DP-T1—E3 (Lead (Pb)-Free)
N-Channel MOSFET
G
D
S
Notes
b. See Solder Profile (c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DS
V
GS
10 secs
Steady State
Unit
60
±20
V
Continuous Drain Current (T
J
= 150°C)
a
T
A
= 25°C
T
A
= 70°C
I
D
20
16
15
12
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Avalanche Energy
I
DM
I
S
I
AS
E
AS
60
4.5
1.6
35
61
mJ
Maximum Power Dissipation
a
T
A
= 25°C
T
A
= 70°C
P
D
5.4
3.4
1.9
1.2
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
T
J
, T
stg
–55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
18
52
1.0
Maximum
23
65
1.3
Unit
Maximum Junction-to-Ambient
a
t
≤
10 sec
Steady State
Steady State
R
thJA
°C/W
Maximum Junction-to-Case (Drain)
R
thJC
RoHS
COMPLIANT