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參數(shù)資料
| 型號(hào)： | SI7478DP-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET |
| 中文描述： | N通道60 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 231K |
| 代理商： | SI7478DP-T1-E3 |
Document Number: 72913
S-51566-Rev. B, 07-Nov-05
www.vishay.com
5
Vishay Siliconix
Si7478DP
New Product
TYPICAL CHARACTERISTICS
25 °C, unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
http://www.vishay.com/ppg72913
.
Normalized Thermal Transient Impedance, Junction-to-Case
10
-
3
10
-
2
1
10
-
1
10
-
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (sec)
N
T
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| Si7501DN | N- and p-channel VDS = 30 V pair |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7478DP-T1-GE3 | 功能描述:MOSFET 60V 20A 5.4W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7483ADP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI7483ADP-T1-E3 | 功能描述:MOSFET 30V 24A 5.4W 5.7mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7483ADP-T1-GE3 | 功能描述:MOSFET 30V 24A 5.4W 5.7mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7483DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
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