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參數(shù)資料
| 型號(hào)： | SI7461DP-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 60-V (D-S) MOSFET |
| 中文描述： | P通道60 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 78K |
| 代理商： | SI7461DP-T1-E3 |
Si7461DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72567
S-40411—Rev. C, 15-Mar-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
1
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
60 V, V
GS
= 0 V
1
A
V
DS
=
60 V, V
GS
= 0 V, T
J
= 70 C
10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
=
10 V
40
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
10 V, I
D
=
14.4 A
0.0115
0.0145
V
GS
=
4.5 V, I
D
=
12.6 A
0.015
0.019
Forward Transconductance
a
g
fs
V
DS
=
15
V, I
D
=
14.4 A
31
S
Diode Forward Voltage
a
V
SD
I
S
=
4.5 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
121
190
Gate-Source Charge
Q
gs
V
DS
=
30 V,
V
GS
=
10 V, I
D
=
14.4 A
20
nC
Gate-Drain Charge
Q
gd
32
Gate-Resistance
R
g
3
Turn-On Delay Time
t
d(on)
20
30
Rise Time
t
r
V
=
30 V, R
= 30
1 A, V
GEN
=
10 V, R
g
= 6
20
30
Turn-Off Delay Time
t
d(off)
I
D
205
310
ns
Fall Time
t
f
90
135
Source-Drain Reverse Recovery Time
t
rr
I
F
=
4.5 A, di/dt = 100 A/ s
45
70
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
= 10 thru 4 V
25 C
T
C
= 125 C
55 C
3 V
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7461DP-T1-GE3 | 功能描述:MOSFET 60V 14.4A 5.4W 14.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7462DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET |
| SI7462DP-T1-E3 | 功能描述:MOSFET 200V 4.1A 4.8W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7462DP-T1-GE3 | 功能描述:MOSFET 200V 4.1A 4.8W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7463ADP-T1-GE3 | 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Intertechnologies 功能描述: 制造商:Vishay Siliconix 功能描述:FET P-CH 40V 16.6A PPAK 8SOIC 制造商:Vishay Intertechnologies 功能描述:DUAL P-CHANNEL 20-V (D-S) MOSFET 制造商:Vishay Intertechnologies 功能描述:MOSFET |
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