參數資料
型號: SI7407DN
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel 12-V (D-S) MOSFET
中文描述: P溝道12 V的(副)MOSFET的
文件頁數: 4/5頁
文件大?。?/td> 53K
代理商: SI7407DN
Si7407DN
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71912
S-22122
Rev. B, 25-Nov-02
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
10
- 3
10
- 2
1
10
600
10
- 1
10
- 4
100
0.01
0
1
40
50
10
600
Single Pulse Power, Juncion-To-Ambient
Time (sec)
30
20
P
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
0.1
10
100
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250 A
Threshold Voltage
V
V
G
T
J
- Temperature ( C)
Safe Operating Area, Junction-To-Ambient
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
T
= 25 C
Single Pulse
-
I
D
10 s
dc
0.1
I
DM
Limited
I
Limited
r
DS(on)
Limited
BV
DSS
Limited
1 s
100 ms
10 ms
1 ms
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SI7407DN-T1 功能描述:MOSFET 12V 15.6A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7407DN-T1-E3 功能描述:MOSFET 12V 15.6A 3.8W 12mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7407DN-T1-GE3 功能描述:MOSFET 12V 15.6A 3.8W 12mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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