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參數(shù)資料
| 型號： | SI7407DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 12-V (D-S) MOSFET |
| 中文描述： | P溝道12 V的（副）MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 53K |
| 代理商： | SI7407DN |
Si7407DN
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71912
S-22122
—
Rev. B, 25-Nov-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -400 A
-0.40
-1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
V
DS
= -9.6 V, V
GS
= 0 V
-1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -9.6 V, V
GS
= 0 V, T
J
= 85 C
-5
A
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -4.5 V
-30
A
V
GS
= -4.5 V, I
D
= -15.6 A
0.009
0.012
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -13.5 A
0.013
0.016
V
GS
= -1.8 V, I
D
= -5 A
0.019
0.024
Forward Transconductance
a
g
fs
V
DS
= -6
V, I
D
= -15.6 A
52
S
Diode Forward Voltage
a
V
SD
I
S
= -3.2 A, V
GS
= 0 V
-0.7
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
39
59
Gate-Source Charge
Q
gs
V
DS
= -6 V,
V
GS
= -4.5 V, I
D
= -15.6 A
6
nC
Gate-Drain Charge
Q
gd
11
Turn-On Delay Time
t
d(on)
30
45
Rise Time
t
r
V
= -6 V, R
= 6
-1 A, V
GEN
= -4.5 V, R
G
= 6
50
75
Turn-Off Delay Time
t
d(off)
I
D
200
300
ns
Fall Time
t
f
165
250
Source-Drain Reverse Recovery Time
t
rr
I
F
= -3.2 A, di/dt = 100 A/ s
60
90
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
5
10
15
20
25
30
0.0
0.4
0.8
1.2
1.6
2.0
0
5
10
15
20
25
30
0
1
2
3
4
V
GS
= 5 thru 2 V
25 C
T
C
= 125 C
1 V
-55 C
1.5 V
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
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| SI7407DN-T1 | 功能描述:MOSFET 12V 15.6A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7407DN-T1-E3 | 功能描述:MOSFET 12V 15.6A 3.8W 12mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7407DN-T1-GE3 | 功能描述:MOSFET 12V 15.6A 3.8W 12mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7409ADN-T1-E3 | 功能描述:MOSFET 30V 11A 3.8W 19mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7409ADN-T1-GE3 | 功能描述:MOSFET 30V 11A 3.8W 19mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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