Si5338
Rev. 1.3
11
Table 7. Control Pins
(VDD = 1.8 V –5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, TA = –40 to 85 °C)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Input Control Pins (IN3, IN4)
Input Voltage Low
VIL
–0.1
—
0.3 x VDD
V
Input Voltage High
VIH
0.7 x VDD
—3.73
V
Input Capacitance
CIN
——
4
pF
Input Resistance
RIN
—20
—
k
Output Control Pins (INTR)
Output Voltage Low
VOL
ISINK =3mA
0
—
0.4
V
Rise/Fall Time 20–80%
tR/tF
CL < 10 pf, pull up 1k
—
10
ns
Table 8. Crystal Specifications for 8 to 11 MHz
Parameter
Symbol
Min
Typ
Max
Unit
Crystal Frequency
fXTAL
8—
11
MHz
Load Capacitance (on-chip differential)
cL (supported)*
11
12
13
pF
cL (recommended)
17
18
19
pF
Crystal Output Capacitance
cO
——
6
pF
Equivalent Series Resistance
rESR
——
300
Crystal Max Drive Level
dL
100
—
W
*Note: See "AN360: Crystal Selection Guide for Si533x and Si5355/56 Devices" for how to adjust the registers to
accommodate a 12 pF crystal CL.
Table 9. Crystal Specifications for 11 to 19 MHz
Parameter
Symbol
Min
Typ
Max
Unit
Crystal Frequency
fXTAL
11
—
19
MHz
Load Capacitance (on-chip differential)
cL (supported)*
11
12
13
pF
cL (recommended)
17
18
19
pF
Crystal Output Capacitance
cO
——
5
pF
Equivalent Series Resistance
rESR
——
200
Crystal Max Drive Level
dL
100
—
W
*Note: See "AN360: Crystal Selection Guide for Si533x and Si5355/56 Devices" for how to adjust the registers to
accommodate a 12 pF crystal CL.