參數(shù)資料
型號: Si4946EY-T1
廠商: Vishay Intertechnology,Inc.
英文描述: Dual N-Channel 60-V (D-S), 175C MOSFET
中文描述: 雙N溝道60五(副),175葷MOSFET的
文件頁數(shù): 3/4頁
文件大小: 44K
代理商: SI4946EY-T1
Si4946EY
Vishay Siliconix
Document Number: 70157
S-03950—Rev. D, 26-May-03
www.vishay.com
2-3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
C
rss
0
6
12
18
24
30
0
1
2
3
4
5
0
2
4
6
8
10
0
4
8
12
16
20
0.4
0.7
1.0
1.3
1.6
1.9
2.2
-50
-25
0
25
50
75
100
125
150
175
0.000
0.025
0.050
0.075
0.100
0.125
0.150
0
6
12
18
24
30
0
200
400
600
800
1000
1200
1400
0
12
24
36
48
60
0
6
12
18
24
30
0
1
2
3
4
5
6
V
GS
= 10 thru 5 V
4 V
V
GS
= 10 V
V
DS
= 30 V
I
D
= 4.5 A
V
GS
= 10 V
I
D
C
oss
C
iss
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
-
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
V
G
-
r
D
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature ( C)
(
-
r
D
150 C
T
C
= -55 C
25 C
V
GS
= 4.5 V
3 V
相關(guān)PDF資料
PDF描述
SI4947ADY Dual P-Channel 30-V (D-S) MOSFET
SI4947ADY-T1 Dual P-Channel 30-V (D-S) MOSFET
SI4947DY Dual P-Channel 30-V (D-S) Rated MOSFET
SI4948EY Dual P-Channel 60-V (D-S), 175C MOSFET
Si4948BEY-E3 Dual P-Channel 60-V (D-S) 175 MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4946EY-T1-E3 功能描述:MOSFET 60V 4.5A 2.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4947ADY 功能描述:MOSFET 30V 3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4947ADY_06 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET
SI4947ADY-E3 功能描述:MOSFET 30V 3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4947ADY-T1 功能描述:MOSFET 30V 3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube