
Si4947ADY
Vishay Siliconix
Document Number: 71101
S-31989—Rev. C, 13-Oct-03
www.vishay.com
1
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-30
0.080 @ V
GS
= -10 V
-3.9
0.135 @ V
GS
= -4.5 V
-3.0
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4947ADY
Si4947ADY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-3.9
-3.0
T
A
= 70 C
-3.1
-2.4
A
Pulsed Drain Current
I
DM
-20
continuous Source Current (Diode Conduction)
a
I
S
-1.7
-1.0
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.2
W
T
A
= 70 C
1.3
0.76
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
54
62.5
Steady State
87
105
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
34
45
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.