- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365551 > Si4946EY-T1 (Vishay Intertechnology,Inc.) Dual N-Channel 60-V (D-S), 175C MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | Si4946EY-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 60-V (D-S), 175C MOSFET |
| 中文描述： | 雙N溝道60五（副），175葷MOSFET的 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | SI4946EY-T1 |
Si4946EY
Vishay Siliconix
www.vishay.com
2-2
Document Number: 70157
S-03950—Rev. D, 26-May-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
2
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 C
25
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
20
A
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 4.5 A
0.045
0.055
V
GS
= 4.5 V, I
D
= 3.9 A
0.055
0.075
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 4.5 A
13
S
Diode Forward Voltage
b
V
SD
I
S
= 2 A, V
GS
= 0 V
0.9
1.2
V
Dynamic
a
Total Gate Charge
Q
g
19
30
Gate-Source Charge
Q
gs
V
DS
= 30 V,
V
GS
= 10 V, I
D
= 4.5 A
4
nC
Gate-Drain Charge
Q
gd
3
Gate Resistance
R
g
1
3.6
Turn-On Delay Time
t
d(on)
13
20
Rise Time
t
r
V
= 30 V, R
= 30
1 A, V
GEN
= 10 V, R
G
= 6
11
20
Turn-Off Delay Time
t
d(off)
I
D
36
60
ns
Fall Time
t
f
11
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2 A, di/dt = 100 A/ s
35
60
Notes
a.
b.
For design aid only; not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4947ADY | Dual P-Channel 30-V (D-S) MOSFET |
| SI4947ADY-T1 | Dual P-Channel 30-V (D-S) MOSFET |
| SI4947DY | Dual P-Channel 30-V (D-S) Rated MOSFET |
| SI4948EY | Dual P-Channel 60-V (D-S), 175C MOSFET |
| Si4948BEY-E3 | Dual P-Channel 60-V (D-S) 175 MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4946EY-T1-E3 | 功能描述:MOSFET 60V 4.5A 2.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4947ADY | 功能描述:MOSFET 30V 3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4947ADY_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
| SI4947ADY-E3 | 功能描述:MOSFET 30V 3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4947ADY-T1 | 功能描述:MOSFET 30V 3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。