參數(shù)資料
型號： SI4936DY
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N-Channel Enhancement Mode MOSFET
中文描述： 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SOIC-8
文件頁數(shù)： 2/4頁
文件大?。?/td> 61K
代理商： SI4936DY
Si4936ADY
Vishay Siliconix
www.vishay.com
2
Document Number: 71132
S-31989—Rev. B, 13-Oct-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10
V
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 5.9 A
0.032
0.036
V
GS
= 4.5 V, I
D
= 4.9 A
0.042
0.053
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 5.9 A
15
S
Diode Forward Voltage
a
V
SD
I
S
= 1.7 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
13
20
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 5.9 A
2.3
nC
Gate-Drain Charge
Q
gd
2.0
Turn-On Delay Time
t
d(on)
6
12
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
14
25
Turn-Off Delay Time
t
d(off)
I
D
30
60
ns
Fall Time
t
f
5
10
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ s
30
60
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
6
12
18
24
30
0
1
2
3
4
5
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 10 thru 5 V
T
C
= -55 C
125 C
2 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
4 V
3 V
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SI4936DY-E3 功能描述:MOSFET 30V 5.8A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4936DYT1 制造商:Vishay Intertechnologies 功能描述: 制造商:Vishay Siliconix 功能描述:
SI4936DY-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 30V 5.8A 8-Pin SOIC N T/R
SI4936DY-T1-E3 功能描述:MOSFET 30 Volt 5.8 Amp 2.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4940DY 功能描述:MOSFET 40V 5.7A 2.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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