參數資料
型號： SI4942DY
廠商： Vishay Intertechnology,Inc.
英文描述： Dual N-Channel 40-V (D-S) MOSFET
中文描述： 雙N溝道40 - V（下局副局長）MOSFET的
文件頁數： 1/5頁
文件大?。?/td> 44K
代理商： SI4942DY
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Low Power Synchronous Rectifier
Automotive 12-V Systems
Si4942DY
Vishay Siliconix
Document Number: 71887
S-03950—Rev. B, 16-May-03
www.vishay.com
1
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
40
0.021 @ V
GS
= 10 V
0.028 @ V
GS
= 4.5 V
7.4
6.4
SO-8
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
5
6
7
8
Top View
2
3
4
1
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
N-Channel MOSFET
Ordering Information:
Si4942DY
Si4942DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
7.4
5.3
T
A
= 70 C
5.8
4.3
Pulsed Drain Current
I
DM
30
A
Avalanche Current
L = 0.1 mH
I
AS
25
Continuous Source Current (Diode Conduction)
a
I
S
1.8
0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.1
1.1
W
T
A
= 70 C
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
50
60
Steady State
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
28
34
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數
參數描述
SI4942DY-T1 功能描述:MOSFET 40V 7.4A 1.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4942DY-T1-E3 功能描述:MOSFET 40V 7.4A 2.1W 21mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4942DY-T1-GE3 功能描述:MOSFET 40V 7.4A 2.1W 21mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4943BDY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET
SI4943BDY-E3 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET
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