參數(shù)資料
型號(hào)： SI4943DY
廠商： Vishay Intertechnology,Inc.
元件分類(lèi)： MOSFETs
英文描述： Dual P-Channel 20-V (D-S) MOSFET
中文描述： 雙P溝道20 - V（下局副局長(zhǎng)）MOSFET的
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 40K
代理商： SI4943DY
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Load Switching
- Computer
- Game Systems
Battery Switching
- 2-Cell Li-lon
Si4943DY
Vishay Siliconix
New Product
Document Number: 71682
S-21192—Rev. B, 29-Jul-02
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-20
0.019 @ V
GS
= -10 V
-8.4
0.030 @ V
GS
= -4.5 V
-6.7
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
1
G
1
D
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-8.4
-6.3
T
A
= 70 C
-6.7
-5.1
A
Pulsed Drain Current
I
DM
-30
continuous Source Current (Diode Conduction)
a
I
S
-1.7
-0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.1
W
T
A
= 70 C
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
45
62.5
Steady State
85
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
26
35
Notes
a.
Surface Mounted on 1 ” x 1” FR4 Board.
相關(guān)PDF資料
PDF描述
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參數(shù)描述
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